? semiconductor components industries, llc, 2008 november, 2008 ? rev. 6 1 publication order number: mcr22 ? 6/d mcr22-6, mcr22-8 preferred device sensitive gate silicon controlled rectifiers reverse blocking thyristors designed and tested for repetitive peak operation required for cd ignition, fuel ignitors, flash circuits, motor controls and low ? power switching applications. features ? 150 a for 2 s safe area ? high dv/dt ? very low forward ?on? voltage at high current ? low ? cost to ? 226 (to ? 92) ? pb ? free packages are available* maximum ratings (t j = 25 c unless otherwise noted) rating symbol value unit peak repetitive off ? state voltage (note 1) (r gk = ik, t j = 40 to +110 c, sine wave, 50 to 60 hz, r gk = 1k ) mcr22 ? 6 mcr22 ? 8 v drm, v rrm 400 600 v on ? state current rms (180 conduction angles, t c = 80 c) i t(rms) 1.5 a peak non ? repetitive surge current, @t a = 25 c, (1/2 cycle, sine wave, 60 hz) i tsm 15 a circuit fusing considerations (t = 8.3 ms) i 2 t 0.9 a 2 s forward peak gate power (pulse width 1.0 sec, t a = 25 c) p gm 0.5 w forward average gate power (t = 8.3 msec, t a = 25 c) p g(av) 0.1 w forward peak gate current (pulse width 1.0 s, t a = 25 c) i fgm 0.2 a reverse peak gate voltage (pulse width 1.0 s, t a = 25 c) v rgm 5.0 v operating junction temperature range @ rated v rrm and v drm t j ? 40 to +110 c storage temperature range t stg ? 40 to +150 c thermal characteristics characteristic symbol max unit thermal resistance, junction ? to ? case r jc 50 c/w thermal resistance, junction ? to ? ambient r ja 160 c/w lead solder temperature (lead length 1/16 from case, 10 s max) t l +260 c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. v drm and v rrm for all types can be applied on a continuous basis. ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. scrs 1.5 amperes rms 400 thru 600 volts preferred devices are recommended choices for future use and best overall value. to ? 92 (to ? 226) case 029 style 10 pin assignment 1 2 3 gate anode cathode k g a see detailed ordering and shipping information in the package dimensions section on page 7 of this data sheet. ordering information mcr 22 ? x ayww marking diagrams mcr22 ? x = device code x = 6 or 8 a = assembly location y = year ww = work week = pb ? free package (note: microdot may be in either location) http://onsemi.com 1 2 3 1 2 bent lead tape & reel ammo pack straight lead bulk pack 3
mcr22 ? 6, mcr22 ? 8 http://onsemi.com 2 electrical characteristics (t c = 25 c unless otherwise noted.) characteristic symbol min typ max unit off characteristics peak repetitive forward or reverse blocking current (v ak = rated v drm or v rrm ; r gk = 1 k )t c = 25 c t c = 110 c i drm , i rrm ? ? ? ? 10 200 a a on characteristics peak forward on ? state voltage (note 2) (i tm = 1 a peak) v tm ? 1.2 1.7 v gate trigger current (continuous dc) (note 3) t c = 25 c (v ak = 6 vdc, r l = 100 )t c = ? 40 c i gt ? ? 30 ? 200 500 a gate trigger voltage (continuous dc) (note 3) t c = 25 c (v ak = 7 vdc, r l = 100 )t c = ? 40 c v gt ? ? ? ? 0.8 1.2 v gate non ? trigger voltage (v ak = 12 vdc, r l = 100 )t c = 110 c v gd 0.1 ? ? v holding current (v ak = 12 vdc, r gk = 1k )t c = 25 c initiating current = 20 ma t c = ? 40 c i h ? ? 2.0 ? 5.0 10 ma dynamic characteristics critical rate of rise of off ? state voltage (r gk = 1k ) (t c = 110 c) dv/dt ? 25 ? v/ s 2. pulse width = 1.0 ms, duty cycle 1%. 3. r gk current not included in measurement. + current + voltage v tm i drm at v drm i h symbol parameter v drm peak repetitive off state forward voltage i drm peak forward blocking current v rrm peak repetitive off state reverse voltage i rrm peak reverse blocking current v tm peak on state voltage i h holding current voltage current characteristic of scr anode + on state reverse blocking region (off state) reverse avalanche region anode ? forward blocking region i rrm at v rrm (off state)
mcr22 ? 6, mcr22 ? 8 http://onsemi.com 3 t , maximum allowable a ambient temperature ( c) t , maximum allowable c case temperature ( c) dc dc i t(av) , average on-state current (amps) 1.8 0 0.2 0.4 0.6 0.8 120 1.0 0 20 40 60 80 100 140 i t(av) , average on-state current (amp) current derating 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 2.0 100 1.6 20 60 140 = conduction angle = 180 = conduction angle = 180 figure 1. maximum case temperature figure 2. maximum ambient temperature i , instantaneous on\state current (amp) t 1.5 v t , instantaneous on-state voltage (volts) 0 0.5 1.0 2.0 0.01 0.05 2.5 0.02 0.1 0.03 3.0 0.07 0.2 0.3 0.5 0.7 1.0 2.0 5.0 25 c t j = 110 c figure 3. typical forward voltage
mcr22 ? 6, mcr22 ? 8 http://onsemi.com 4 r(t), transient thermal resistance (normalized) 1000 t, time (ms) 10000 5000 0.2 2000 500 200 100 20 50 10 5.0 2.0 1.0 0.5 0.05 0.1 0.01 0.02 0.07 0.7 0.03 0.1 0.2 0.3 0.5 1.0 figure 4. thermal response p maximum average power dissipation (watts) (av) i , holding current (ma) h v , gate trigger voltage (volts) gt i gate trigger current ( gt 0.4 0.5 0.6 0.7 0.8 100 0.3 -75 -50 0 25 75 50 -25 t j , junction temperature ( c) v ak = 7.0 v r l = 100 80 20 0110 100 60 40 t j , junction temperature ( c) 1.0 5.0 2.0 -40 10 -20 v ak = 12 v r l = 100 1.0 2.0 3.0 5.0 10 20 30 0 -40 -20 50 20 40 60 80 100 100 110 t j junction temperature ( c) 1.8 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 2.0 0.2 0.6 i t(av) , average on-state current (amps) 1.6 1.2 0.4 0 dc 1.4 120 1.0 90 0.8 180 60 30 typical characteristics a) figure 5. typical gate trigger voltage figure 6. typical gate trigger current figure 7. typical holding current figure 8. power dissipation 110
mcr22 ? 6, mcr22 ? 8 http://onsemi.com 5 to ? 92 eia radial tape in fan fold box or on reel h2a h2a h f1 f2 p2 p2 p1 p d w w1 l1 w2 h2b h2b t1 t t2 h4 h5 h1 l figure 9. device positioning on tape item symbol specification inches millimeter min max min max tape feedhole diameter d 0.1496 0.1653 3.8 4.2 component lead thickness dimension d2 0.015 0.020 0.38 0.51 component lead pitch f1, f2 0.0945 0.110 2.4 2.8 bottom of component to seating plane h .059 .156 1.5 4.0 feedhole location h1 0.3346 0.3741 8.5 9.5 deflection left or right h2a 0 0.039 0 1.0 deflection front or rear h2b 0 0.051 0 1.0 feedhole to bottom of component h4 0.7086 0.768 18 19.5 feedhole to seating plane h5 0.610 0.649 15.5 16.5 defective unit clipped dimension l 0.3346 0.433 8.5 11 lead wire enclosure l1 0.09842 ? 2.5 ? feedhole pitch p 0.4921 0.5079 12.5 12.9 feedhole center to center lead p1 0.2342 0.2658 5.95 6.75 first lead spacing dimension p2 0.1397 0.1556 3.55 3.95 adhesive tape thickness t 0.06 0.08 0.15 0.20 overall taped package thickness t1 ? 0.0567 ? 1.44 carrier strip thickness t2 0.014 0.027 0.35 0.65 carrier strip width w 0.6889 0.7481 17.5 19 adhesive tape width w1 0.2165 0.2841 5.5 6.3 adhesive tape position w2 .0059 0.01968 .15 0.5 notes: 1. maximum alignment deviation between leads not to be greater than 0.2 mm. 2. defective components shall be clipped from the carrier tape such that the remaining protrusion (l) does not exceed a maximum of 11 mm. 3. component lead to tape adhesion must meet the pull test requirements. 4. maximum non ? cumulative variation between tape feed holes shall not exceed 1 mm in 20 pitches. 5. holddown tape not to extend beyond the edge(s) of carrier tape and there shall be no exposure of adhesive. 6. no more than 1 consecutive missing component is permitted. 7. a tape trailer and leader, having at least three feed holes is required before the first and after the last component. 8. splices will not interfere with the sprocket feed holes.
mcr22 ? 6, mcr22 ? 8 http://onsemi.com 6 ordering & shipping information: mcr22 series packaging options, device suffix u.s. europe equivalent shipping ? description of to ? 92 tape orientation mcr22 ? 8rl1 2000 / tape & reel flat side of to ? 92 and adhesive tape visible mcr22 ? 8rl1g mcr22 ? 6 5000 units / box n/a, bulk mcr22 ? 6g mcr22 ? 8 mcr22 ? 8g mcr22 ? 6rlra 2000 / tape & reel round side of to ? 92 and adhesive tape visible mcr22 ? 6rlrag mcr22 ? 6rlrp 2000 / tape & ammo pack flat side of to ? 92 and adhesive tape visible mcr22 ? 6rlrpg ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d.
mcr22 ? 6, mcr22 ? 8 http://onsemi.com 7 package dimensions to ? 92 (to ? 226) case 29 ? 11 issue am notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. contour of package beyond dimension r is uncontrolled. 4. lead dimension is uncontrolled in p and beyond dimension k minimum. r a p j l b k g h section x ? x c v d n n xx seating plane dim min max min max millimeters inches a 0.175 0.205 4.45 5.20 b 0.170 0.210 4.32 5.33 c 0.125 0.165 3.18 4.19 d 0.016 0.021 0.407 0.533 g 0.045 0.055 1.15 1.39 h 0.095 0.105 2.42 2.66 j 0.015 0.020 0.39 0.50 k 0.500 --- 12.70 --- l 0.250 --- 6.35 --- n 0.080 0.105 2.04 2.66 p --- 0.100 --- 2.54 r 0.115 --- 2.93 --- v 0.135 --- 3.43 --- 1 notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: millimeters. 3. contour of package beyond dimension r is uncontrolled. 4. lead dimension is uncontrolled in p and beyond dimension k minimum. r a p j b k g section x ? x c v d n xx seating plane dim min max millimeters a 4.45 5.20 b 4.32 5.33 c 3.18 4.19 d 0.40 0.54 g 2.40 2.80 j 0.39 0.50 k 12.70 --- n 2.04 2.66 p 1.50 4.00 r 2.93 --- v 3.43 --- 1 t straight lead bulk pack bent lead tape & reel ammo pack style 10: pin 1. cathode 2. gate 3. anode on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5773 ? 3850 mcr22 ? 6/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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